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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1186A DESCRIPTION With TO-220Fa package Low collector saturation votlage Complement to type 2SD1763A High breakdown voltage APPLICATIONS For use in low frequency power amplifer applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER HAN INC Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -160 -160 -5 -1.5 -3.0 UNIT V V V A A Open collector Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2.0 W 20 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SB1186A SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -160 V V(BR)CBO Collector-base breakdown voltage IC=-50|I A; IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-50|I A; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 |I A IEBO Emitter cut-off current hFE fT DC current gain VEB=-4V; IC=0 -1.0 |I A IC=-0.1A ; VCE=-5V 60 Transition frequency COB Collector output capacitance hFE Classifications D 60-120 E 100-200 HAN INC SEM GE IC=-0.1A; VCE=-5V IE=0;f=1MHz ; VCB=-10V OND IC TOR UC 200 50 30 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1186A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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